Self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMT structures, using InAlAs as an etch-stop layer
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTsElectronics Letters, 1991
- Carbon implantation in InGaAs and AlInAsApplied Physics Letters, 1990
- Effects of dynamic spectral behaviour and mode-partitioning of 1550nm distributed feedback lasers on Gbit/s transmission systemsElectronics Letters, 1988