Performance predictions for vertical-cavity semiconductor laser amplifiers
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (11) , 2491-2499
- https://doi.org/10.1109/3.333700
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulatorElectronics Letters, 1991
- Spontaneous emission factor of a microcavity DBR surface-emitting laserIEEE Journal of Quantum Electronics, 1991
- Spontaneous emission and gain in GaAlAs quantum well lasersIEEE Journal of Quantum Electronics, 1991
- High powers and subpicosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum well laserApplied Physics Letters, 1991
- Detuning characteristics and conversion efficiency of nearly degenerate four-wave mixing in a 1.5- mu m traveling-wave semiconductor laser amplifierIEEE Journal of Quantum Electronics, 1990
- Predicted performance of quantum-well GaAs-(GaAl)As optical amplifiersIEEE Journal of Quantum Electronics, 1990
- Accurate analysis of δv/v surface acoustic waveguides on a piezoelectric anisotropic substrateElectronics and Communications in Japan (Part I: Communications), 1987
- AM and FM quantum noise in semiconductor lasers - Part I: Theoretical analysisIEEE Journal of Quantum Electronics, 1983
- AM and FM quantum noise in semiconductor lasers - Part II: Comparison of theoretical and experimental results for AlGaAs lasersIEEE Journal of Quantum Electronics, 1983
- Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emissionIEEE Journal of Quantum Electronics, 1980