Photoluminescence from GaN films grown by MBE on an substrate
- 1 January 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (1) , 59-63
- https://doi.org/10.1088/0268-1242/12/1/012
Abstract
GaN films were grown by the MBE method on substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D - A pair recombination (3.154 eV) and also free electron - neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.Keywords
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