Pattern Etching of CVD Si3 N 4 / SiO2 Composites in HF / Glycerol Mixtures

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Abstract
Solutions of concentrated (49%) aqueous in glycerol have been found to etch CVD films faster than thermally grown over a wide temperature range. Since silicon dioxide films are etched much faster than silicon nitride films in aqueous media, this result is quite surprising, and the mechanism for the etch rate reversal is not understood at present. mixtures have been used to pattern a variety of composite structures using either photoresist or metal masks.

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