High Pressure Structural Transitions in Semiconductors
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (S1)
- https://doi.org/10.7567/jjaps.32s1.11
Abstract
A given solid-solid phase transition may be observed at different pressures depending on the observation technique used and on the experimental conditions. Metastability and hysteresis phenomena are further complicated by the occurrence of intermediate phases and non-reversible behavior. Precise determination of phase lines thus requires measurements at variable temperature, over the PT plane, using the most recent experimental techniques.Keywords
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