The response of a silicon surface barrier detector to monoenergetic electrons in the range 100–600 keV
- 1 September 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 200 (2-3) , 377-381
- https://doi.org/10.1016/0167-5087(82)90457-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- An unfolding procedure for slowly varying pulse height spectra produced by β particles in Si(Li) detectorsNuclear Instruments and Methods, 1978
- An empirical equation for the backscattering coefficient of electronsNuclear Instruments and Methods, 1971
- Rückstreung von elektronen bei 0.25 und 0.5 MeV an aluminiumNuclear Instruments and Methods, 1970
- Response of silicon detectors to monoenergetic electrons with energies between 0.15 and 5.0 MeVNuclear Instruments and Methods, 1969
- Backscattering and bremsstrahlung of electrons in a silicon detectorNuclear Instruments and Methods, 1968
- Electron scattering from silicon semi-conductor detectorsNuclear Instruments and Methods, 1968
- Backscattering of 1-MeV electrons from siliconNuclear Instruments and Methods, 1966
- Studies of beta spectra using a solid state spectrometerNuclear Instruments and Methods, 1965
- Semiconductor Electron DetectorsIRE Transactions on Nuclear Science, 1961
- Bremsstrahlung Cross-Section Formulas and Related DataReviews of Modern Physics, 1959