Optical memory effect in GaN epitaxial films
- 14 July 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (2) , 234-236
- https://doi.org/10.1063/1.120414
Abstract
We report on memory effects in the optical properties of GaN and AlN epitaxial-films grown by atmospheric pressure metal organic chemical vapor deposition. After exposing selected areas of particular samples with He–Cd laser light (3.8 eV), we observed a persistent and marked decrease in the near band edge photoluminescence (PL) intensity emitted from these areas. This effect has been observed in epitaxial films that typically have a pyramidlike hillock surface. This ability to modulate PL emission intensity at individual points in these materials can be exploited as a method for optical data storage. A means of erasing information stored using this effect has also been investigated using lower energy (∼2 eV).Keywords
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