C-V Shift Characteristics of Metal-Al2O3-Si and Metal-Al2O3-SiO2-Si Structures

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Abstract
C-V shift characteristics of MAS(Metal/Al2O3/Si) structure with Al2O3 prepared by the hydrolysis of AlCl3 are investigated as a function of the Al2O3 thickness, the temperature and the applied pulse width. Using also MAOS(Metal/Al2O3/SiO2/Si) structure the critical voltage required to shift the C-V curve is given as a function of the SiO2 thickness. The results show that the critical voltage of MAOS structure increases in proportion to the SiO2 thickness over the range 0–700Å for negative bias and in the range 80–700Å for the positive bias. Liquid such as Hg and diluted H3PO4 is used as an electrode as a substitute for metal. This Liquid/Al2O3/Si structure is not found to exhibit the positive C-V shift for the negative bias case. A qualitative explanation responsible for the C-V shift characteristics of MAS and MAOS structures is presented from these experimental results.