A proposal for a high-speed In_0.52Al_0.48As/In_0.53Ga_0.47As MODFET with an (InAs)_m(GaAs)_msuperlattice channel

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1 July 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (7) , 436-439
https://doi.org/10.1109/edl.1986.26428

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