A high efficiency 0.25 mu m pseudomorphic HEMT power process
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 255-257
- https://doi.org/10.1109/gaas.1992.247269
Abstract
A high-efficiency power process based on a 0.25- mu m pseudomorphic HEMT (high-electron-mobility transistor) has been developed that consistently demonstrates state-of-the-art performance at X- through Ku-band frequencies. Discrete 1.2-mm transistors operating at 18 GHz have simultaneously demonstrated over 28.9 dBm (776 mW) output power with over 6.0 dB of associated gain and 53% power added efficiency. This combination of high power added efficiency, gain, and output power coupled with very versatile performance characteristics makes these devices suitable for a wide range of monolithic microwave integrated circuit applications. The high yield fabrication process is well suited for volume production and is currently being used for high-efficiency amplifiers through Ku-band.<>Keywords
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