Theory of the Effect of Strain on GaAs Electroluminescent Diodes
- 1 April 1965
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (4) , 1408-1411
- https://doi.org/10.1063/1.1714319
Abstract
A simplified theory of the effect of strain on the acceptor states in GaAs is used to account for observations made on electroluminescent diodes, the optical transition being between the conduction band and the acceptor states. The acceptor states are described as having a hydrogenic envelope in k space, and as being constituted primarily of states of the heavy mass band. The calculated changes in intensity and the line splitting are in fair agreement with experiment, but no explanation of the observed line shift has yet been found.This publication has 4 references indexed in Scilit:
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Scattering of Holes by Phonons in GermaniumPhysical Review B, 1956
- Theory of Acceptor Levels in GermaniumPhysical Review B, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955