Transit frequency of fast Si self-aligned bipolar transistors
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 24 (6) , 1756-1759
- https://doi.org/10.1109/4.45018
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A simple method for separation of the internal and external (peripheral) currents of bipolar transistorsSolid-State Electronics, 1984
- Proper choice of the measuring frequency for determining fT of bipolar transistorsSolid-State Electronics, 1983
- Microwave transistors: Theory and designProceedings of the IEEE, 1971
- Transistor Internal Parameters for Small-Signal RepresentationProceedings of the IRE, 1961