Mechanisms of the negative-resistance characteristics in AC thin-film electroluminescent devices
- 1 May 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (5) , 452-459
- https://doi.org/10.1109/t-ed.1983.21146
Abstract
A model describing the mechanism responsible for generating the negative-resistance phenomenon found in hysteretic ZnS:Mn ACTFEL devices is presented. This model, which is based on simple physics intuitions rather than elaborate mathematical and numerical analyses, outlines several essential device parameters that are necessary to induce the negative-resistance effect.Keywords
This publication has 0 references indexed in Scilit: