Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates
- 16 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (20) , 1608-1610
- https://doi.org/10.1063/1.98570
Abstract
In GaAs-GaAsP strained-layer superlattices grown lattice matched to GaAs are effective buffer layers in reducing dislocations in epitaxial GaAs films grown on Si substrates. The strained-layer superlattice structure permits high values of strain to be employed without the strained-layer superlattice generating dislocations of its own. We find that the strained-layer superlattice buffer is extremely effective in blocking threading dislocations of low density and is less effective when the dislocation is high. It appears that for a given strained-layer superlattice there is a finite capacity for blocking dislocations. Transmission electron microscopy has been used to investigate the role of the superlattice buffer layer.Keywords
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