High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures
- 1 January 1995
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 46 (1-3) , 298-301
- https://doi.org/10.1016/0924-4247(94)00909-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Evaluation of InP Epi-ready wafers for epitaxial growthPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Narrow-gap semiconductor magnetic-field sensors and applicationsSemiconductor Science and Technology, 1993
- Highly-sensitive InGaAs-2DEG Hall device made of pseudomorphic In0.52A10.48As/In0.8Ga0.2As heterostructureSensors and Actuators A: Physical, 1992