A study of photovoltage in GaAs-AlGaAs multiple quantum well material
- 1 November 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (11) , 1094-1105
- https://doi.org/10.1088/0268-1242/3/11/003
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The effect of random doping fluctuations on the Fermi level in a semiconductorSemiconductor Science and Technology, 1988
- Investigation of intrinsic and extrinsic photoluminescence in MQWSuperlattices and Microstructures, 1986
- Resonant injection quantum well diodes and lasersSuperlattices and Microstructures, 1986
- Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistorsApplied Physics A, 1984
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979
- Electrical characterization of epitaxial layersThin Solid Films, 1976