NiO as an Inorganic Hole-Transporting Layer in Quantum-Dot Light-Emitting Devices
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- 3 November 2006
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (12) , 2991-2994
- https://doi.org/10.1021/nl0623208
Abstract
We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq3), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.Keywords
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