Atomic force microscopy investigations of dry etched gate recesses for InGaAs/InAlAs-based high-electron-mobility transistors using methane–hydrogen reactive ion etching
- 1 November 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (6) , 2386-2389
- https://doi.org/10.1116/1.588079
Abstract
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