Liquid phase epitaxial growth of GaxIn1−xP
- 1 November 1972
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 1 (4) , 437-457
- https://doi.org/10.1007/bf02659168
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Materials for light emitting diodesJournal of Electronic Materials, 1972
- Photoluminescence Processes inat 2°KPhysical Review B, 1971
- Long-Wavelength Optical Phonons inPhysical Review B, 1971
- Thermoreflectance studies of thin epitaxially deposited (InGa)P alloysJournal of Physics C: Solid State Physics, 1971
- Electron Transport in InSb, InAs, and InPPhysical Review B, 1971
- Band Structure of InGaP from Pressure ExperimentsJournal of Applied Physics, 1970
- Intra- and Interband Free-Carrier Absorption and the Fundamental Absorption Edge in-Type InPPhysical Review B, 1970
- Band Structure and High-Field Transport Properties of InPPhysical Review B, 1970
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968