Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs
- 31 December 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (12) , 1401-1408
- https://doi.org/10.1016/0038-1101(91)90036-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel currentIEEE Transactions on Electron Devices, 1990
- AN EFFICIENT DIFFUSION ALGORITHM FOR 2‐D VLSI PROCESS MODELING CODECOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1990
- Tunneling leakage in Ge preamorphized shallow junctionsIEEE Transactions on Electron Devices, 1988
- Leakage mechanisms in the trench transistor DRAM cellIEEE Transactions on Electron Devices, 1988
- Subbreakdown drain leakage current in MOSFETIEEE Electron Device Letters, 1987
- Dependence of peak current density on acceptor concentration in germanium tunnel diodesSolid-State Electronics, 1962
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Theory of TunnelingJournal of Applied Physics, 1961
- Internal Field Emission at Narrow Silicon and GermaniumJunctionsPhysical Review B, 1960
- Observation of Direct Tunneling in GermaniumPhysical Review Letters, 1959