Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure

1 November 1985

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 24 (11A) , L893-894
https://doi.org/10.1143/jjap.24.l893

Abstract

Persistent photoconductivity due to the DX center in GaAs under a hydrostatic pressure of about 30 kbar has been observed for the first time. The characteristic temperature-dependent photoconductivity observed in GaAs under pressure is quite similar to that in AlGaAs alloy system. This indicates that the DX center in GaAs under hydrostatic pressure has also a large lattice relaxation owing to the AlGaAs-like conduction band structure.

Keywords

This publication has 5 references indexed in Scilit:

A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
Japanese Journal of Applied Physics, 1985
Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
Japanese Journal of Applied Physics, 1985
Pressure and compositional dependences of the Hall coefficient in ${Al}_{x} {Ga}_{1 - x} As$ and their significance
Physical Review B, 1980
Trapping characteristics and a donor-complex ( $DX$ ) model for the persistent-photoconductivity trapping center in Te-doped ${Al}_{x} {Ga}_{1 - x} As$
Physical Review B, 1979
Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
Physical Review Letters, 1977