Germanium on silicon pin photodiodes forthe near infrared
- 7 December 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (25) , 2095-2096
- https://doi.org/10.1049/el:20001448
Abstract
Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4 A/W at 1.3 µm, dark currents below 20 mA/cm2 and response times shorter than 800 ps.Keywords
This publication has 7 references indexed in Scilit:
- Efficient high-speed near-infrared Ge photodetectors integrated on Si substratesApplied Physics Letters, 2000
- High-quality Ge epilayers on Si with low threading-dislocation densitiesApplied Physics Letters, 1999
- High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffersApplied Physics Letters, 1998
- Normal-incidence strained-layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μmApplied Physics Letters, 1995
- GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μmApplied Physics Letters, 1986
- New infrared detector on a silicon chipIEEE Transactions on Electron Devices, 1984
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964