A 0.18/spl mu/m CMOS Process Using Nitrogen Profile-engineered Gate Dielectrics

Publisher Website

1 January 1997

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 47-48
https://doi.org/10.1109/vlsit.1997.623688

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Degradation of oxynitride gate dielectric reliability due to boron diffusion
Applied Physics Letters, 1996
Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration
IEEE Transactions on Electron Devices, 1994
Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K
IEEE Transactions on Electron Devices, 1990