Effect of temperature-dependent energy levels in Boltzmann transport theory
- 14 October 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (19) , 3803-3809
- https://doi.org/10.1088/0022-3719/10/19/015
Abstract
The authors consider the Boltzmann transport equation in the presence of a finite temperature gradient for the case in which the single-particle energies are temperature dependent. It is shown that possible additional effects arising from the spatial variation of the energies do not occur and that the transport coefficients are just those appropriate to the temperature of interest. In particular, it is shown that the temperature coefficient of the band edge should appear in the expression for the absolute thermoelectric power of a semiconductor.Keywords
This publication has 2 references indexed in Scilit:
- Effect of temperature-dependent band shifts on semiconductor transport propertiesSolid State Communications, 1977
- Conduction current and generalized einstein relations for degenerate semiconductors and metalsPhysica Status Solidi (b), 1976