Quantum effects of electrons and holes in the MOSFET inversion layer
- 1 November 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (11) , 487-490
- https://doi.org/10.1109/edl.1984.25998
Abstract
Based on the study of mobility degradation due to the gate field, two different mechanisms of the quantum effects are proposed for inversion carriers: i) the quantization of inversion carriers and the populating of the upper sub-bands, which tend to increase the dependence of mobility on the gate field; and ii) the quantum mechanical channel broadening, which tends to decrease the dependence of mobility on the gate field. Experimental data for electrons and holes at 25 and 125°C will be reported and analyzed.Keywords
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