Limitations of the process window for the bias enhanced nucleation of heteroepitaxial diamond films on silicon in the time domain
- 1 April 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (7) , 3092-3095
- https://doi.org/10.1063/1.364319
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Diamond film orientation by ion bombardment during depositionApplied Physics Letters, 1996
- Nucleation and Growth of Heteroepitaxial Diamond Films on SiliconPhysica Status Solidi (a), 1996
- Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via β-SiC Buffer LayerJapanese Journal of Applied Physics, 1995
- Optical characterization of the cathode plasma sheath during the biasing step for diamond nucleation on siliconDiamond and Related Materials, 1995
- The influence of the growth process on the film texture of epitaxially nucleated diamond on silicon (001)Diamond and Related Materials, 1995
- Heteroepitaxial diamond growth on (100) siliconDiamond and Related Materials, 1993
- Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleationApplied Physics Letters, 1993
- Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopyPhysical Review B, 1992
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Generation of diamond nuclei by electric field in plasma chemical vapor depositionApplied Physics Letters, 1991