FAR-INFRARED ABSORPTION IN HIGH RESISTIVITY GaAs
- 15 July 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (2) , 74-75
- https://doi.org/10.1063/1.1652908
Abstract
The absorption of high resistivity GaAs has been measured in the spectral region 15 to 190 cm−1 at room temperature and at 82°K. The observed temperature and frequency dependence indicate an absorption dominated by 2‐phonon difference processes.Keywords
This publication has 6 references indexed in Scilit:
- ABSOLUTE MEASUREMENT OF SECOND ORDER NONLINEAR COEFFICIENT FOR OPTICAL GENERATION OF MILLIMETER WAVE DIFFERENCE FREQUENCIES IN GaAsApplied Physics Letters, 1968
- TEMPERATURE DEPENDENCE OF THE MICROWAVE DIELECTRIC CONSTANT OF THE GaAs LATTICEApplied Physics Letters, 1968
- DIELECTRIC CONSTANT AND LOSS TANGENT OF SEMI-INSULATING GaAs AT MICROWAVE FREQUENCIESApplied Physics Letters, 1967
- Far-Infrared Lattice Absorption in Alkali Halide CrystalsPhysical Review B, 1965
- The infra-red spectra of crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1960
- Anharmonic Forces in the GaP CrystalPhysical Review B, 1960