Hydrogenation Of InP Surface By Phosphorus-Added Hydrogen Plasma

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Abstract
Hydrogenation of InP surface has been attempted by the glow discharge plasma of hydrogen and phosphine mixture. It is shown by Auger spectroscopy that the use of the phosphorus-added hydrogen plasma suppresses effectively the preferential etching of phosphorus at the InP surface. A mirror surface of InP is maintained after the plasma exposure even at 250°C. It is verified by SIMS analysis that hydrogen with the density higher than 1 x 1018cm -3 diffuses into the bulk InP to 500 nm in depth. Photoluminescence(PL) intensity of the hydrogenated InP surface is increased by a factor of 2. An intentional slow etching and subsequent PL measurement of the hydrogenated surface shows a significant increase in the PL intensity at the hydrogen-treated surface in addition to a moderately enhanced PL intensity over the hydrogen diffused region. Enhancement of the PL intensity over the hydrogen diffused region may relate to the defect passivation. In addition, a significant increase in the PL intensity at the surface is explained in terms of the band bending at the surface possibly due to an introduction of phosphorus vacancies.

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