GaAs LSI-directed MESFET's with self-aligned implantation for n+-layer technology (SAINT)
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (11) , 1772-1777
- https://doi.org/10.1109/t-ed.1982.21025