38-GHz Band High-Power MMIC Amplifier Design using Improved Load-Pull Method
- 1 September 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 151-156
- https://doi.org/10.1109/euma.1990.336179
Abstract
To facilitate accurate amplifier design, the large-signal impedance of a GaAs FET with a 0.25-μm-long gate was measured using an improved load-pull method. A new MMIC transformer was used in the measurement to transform the FET's impedance into the coverage range of a twin sleeve tuner. The transformer as well as a wafer prober improved measurement accuracy. Two types of high-power amplifiers were designed using the measured large-signal impedance: one is composed of four FET cells with 400-μm-wide gates and the other is composed of two FET cells with 600-μm-wide gates. At 38 GHz and at 1-dB gain compression level, the former has an output power of 25.1 dBm and the latter 23.5 dBm.Keywords
This publication has 2 references indexed in Scilit:
- A New Load-Pull Characterization Method for Microwave Power TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Ka-band monolithic GaAs FET power amplifier modulesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003