OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) IN a-Si

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Abstract
Earlier studies of PL in a-Si : H have shown two resolved bands near 0.9eV and 1.3eV. with strength and peak position dependent on sample preparation. By following the spectral dependence of ODMR in a wide range of glowdischarge (gd) and sputtered (sp) samples, we have shown that the 1.3eV emission has contributions from two distinct components, one of which, near 1.25eV. is associated with pair recombination, and another, near 1.4eV, which shows quenching ODMR signals only, and may be due to excitonic emission. The quenching resonances are identified as electrons and holes occupying tail states, which participate in non-radiative recombination. The 1.25eV emission and 0.9eV emission are both associated with a resonance near g = 2.006, suggesting a radiative dangling bond. The peak energy of these pair emissions is primarily determined by the nature of the hole centre involved

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