A New Self-Aligned A-SI TFT Using Ion Doping and Chromium Silicide Formation
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Self-aligned bottom-gate submicrometer-channel-length a-Si-:H thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Semitransparent Silicide Electrode Formed on the Surface of a-Si:HMRS Proceedings, 1984
- The effects of ion implantation on the electrical properties of amorphous siliconPhilosophical Magazine Part B, 1980