Rapid solid phase crystallization of nanocrystalline silicon deposited by electron cyclotron plasma chemical vapor deposition
- 23 September 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (13) , 1873-1875
- https://doi.org/10.1063/1.117462
Abstract
Nanocrystalline silicon films were deposited in an electron cyclotron resonance plasma of Ar+H2+SiH4 on (100) and (111) oriented Si substrates without external heating. Before deposition, the substrates were cleaned in situ in an Ar+H2 plasma. This cleaning process caused surface roughness particularly on (100) substrates. Apparently, the excessive roughness of the interface with (100) Si surface prevented complete crystallization of the subsequently deposited films. In contrast, rapid solid phase crystallization of the films deposited on (111) surfaces occurred at around 1000 °C.This publication has 0 references indexed in Scilit: