CW operation of a InGaAsP/InP gain-coupled distributed feedback laser with a corrugated active layer
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (11) , 958-960
- https://doi.org/10.1109/68.97825
Abstract
A low-threshold continuous-wave (CW)-operable gain-coupled distributed-feedback laser with a corrugated active layer was realized with InGaAsP/InP materials by implementing active ion etching and organometallic vapor-phase epitaxy. Without any phase-shifting structures, the devices exhibited excellent single-longitudinal-mode oscillation, independent of facet reflection. Threshold currents as low as 12 mA and side-mode suppression ratios as high as 55 dB were demonstrated at a wavelength of 1.55 mu m.<>Keywords
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