Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2139-2141
- https://doi.org/10.1143/jjap.27.l2139
Abstract
Boron ions have been successfully doped into crystalline silicon substrates using AC(20 kHz)-biased microwave electron cyclotron resonance plasma, as functions of microwave power and AC bias power. Diborane gas diluted with hydrogen was used as a gas source. A sheet resistance of 10100 kΩ/\Box, junction depth of 0.1 µm and boron concentration at the silicon surface of 1018 atoms/cm3 were attained using this technique.Keywords
This publication has 2 references indexed in Scilit:
- Formation of source and drain regions for a-Si:H thin-film transistors by low-energy ion doping techniqueIEEE Electron Device Letters, 1988
- Hydrogenation for PolySilicon MOSFET's by ion shower doping techniqueIEEE Electron Device Letters, 1986