An analysis of the frequency dependence of the capacitance of abrupt P−N junction semiconductor devices
- 30 April 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (4) , 473-483
- https://doi.org/10.1016/0038-1101(70)90158-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The Conduction-Diffusion Theory of Semiconductor JunctionsJournal of Applied Physics, 1967
- Capacitance of p-n Junctions: Space-Charge CapacitanceJournal of Applied Physics, 1966
- Effects of Electrons and Holes on the Transition Layer Characteristics of Linearly Graded P-N JunctionsProceedings of the IRE, 1961
- Potential Distribution and Capacitance of a Graded p-n JunctionBell System Technical Journal, 1960
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949
- On the Theory of the A-C. Impedance of a Contact RectifierBell System Technical Journal, 1949