RATE OF GROWTH OF DIFFUSION LAYERS IN U-Al AND U-AlSi COUPLES

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Abstract
The rates of growth of diffusion layers between U and Al and between U and AlSi alloy (eutectic composition) were studied and compared over the temperature range 250 to 55O deg C. Metallographic observation shows that the U-- Al reaction layers form three to five times as fast as the U-- AlSi layers over this temperature range. Sixty per cent of the layer growth takes place in the Al or AlSi alloy and 40% in U. (auth)

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