Development of cryogenic load-pull analysis: power amplifier technology performance trends
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3 (0149645X) , 1663-1666
- https://doi.org/10.1109/mwsym.1998.700698
Abstract
On-wafer load-pull measurements at cryogenic temperatures are made for the first time on FET power amplifier structures to demonstrate the improved performance when operated at reduced temperatures. Measurements from 300 K to 17 K demonstrate improvements in both efficiency (40-80%) and output power (1.0-2.7 dB). These results demonstrate that advanced device technologies that are optimized for cooled operation may provide significantly enhanced system performance and reliability with a minimal increase in prime power.Keywords
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