The effect of doping profile variations upon deep submicrometer MOSFET's

• 1 June 1995
• journal article
• Published by Elsevier in Microelectronic Engineering
• Vol. 28  (1-4) , 155-161
• https://doi.org/10.1016/0167-9317(95)00035-7

Abstract

Keywords

• DOPING PROFILE
• CHANNEL PROFILE
• PROFILE VARIATIONS
• EXPONENTIAL DEPENDENCE
• CURRENT VARIATIONS
• LENGTH
• SUBTHRESHOLD
• EFF