Degradation induced formation of extended defects in GaP:N LED's
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (4) , 421-424
- https://doi.org/10.1109/T-ED.1981.20358
Abstract
The light output degradation of commercial VPE GaP:N LED's was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T6. T6is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level.Keywords
This publication has 0 references indexed in Scilit: