Silicon surface emission of hot electrons
- 1 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1) , 283-289
- https://doi.org/10.1016/0038-1101(78)90149-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High-field capture of electrons by Coulomb-attractive centers in silicon dioxideJournal of Applied Physics, 1976
- Electron current injected into SiO2 from p-type Si depletion regionsJournal of Applied Physics, 1976
- Mean free path of hot electrons at the surface of boron-doped siliconJournal of Applied Physics, 1975
- Optically induced injection of hot electrons into SiO2Journal of Applied Physics, 1974
- Nonavalanche injection of hot carriers into SiO2Journal of Applied Physics, 1973