Hole-mediated chemisorption of atomic hydrogen in silicon
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7) , 748-750
- https://doi.org/10.1063/1.96026
Abstract
It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomic hydrogen.Keywords
This publication has 9 references indexed in Scilit:
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985
- Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogenApplied Physics Letters, 1985
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Neutralization of acceptors in silicon by atomic hydrogenApplied Physics Letters, 1984
- Study of the atomic models of three donorlike defects in silicon metal-oxide-semiconductor structures from their gate material and process dependenciesJournal of Applied Physics, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitorsJournal of Applied Physics, 1983
- Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependencesJournal of Applied Physics, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983