Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAlxGa1-x(SySe1-y)2
- 1 April 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (4B) , L575
- https://doi.org/10.1143/jjap.33.l575
Abstract
CuAl x Ga1- x (S y Se1- y )2 quaternary and pentanary alloy layers, lattice-matched with GaP, have been successfully grown by metalorganic vapor phase epitaxy at substrate temperatures of 450–500°C, which could not be achieved previously at 600°C. The quality of layers in terms of crystallinity and luminescence properties has been improved by lowering the growth temperature. The growth over a wide range of Al composition has been demonstrated; photoluminescence over the yellow to violet spectral region can be obtained without changing the lattice parameter.Keywords
This publication has 4 references indexed in Scilit:
- Metalorganic Vapor Phase Epitaxy of CuAlxGa1-x(SySe1-y)2Japanese Journal of Applied Physics, 1993
- MOVPE growth and characterization of I-III-VI2 Chalcopyrite compoundsJournal of Crystal Growth, 1988
- Luminescence of CuGaS2Journal of Applied Physics, 1985
- Alloying mechanisms in MOVPE GaAs1-xPxJournal of Crystal Growth, 1983