Electronic structure of erbium suicide ultra-thin films
- 10 August 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 293 (1-2) , 86-92
- https://doi.org/10.1016/0039-6028(93)90246-g
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)Applied Surface Science, 1993
- The effect of silicon vacancies on the electron structure of yttrium disilicideJournal of Physics: Condensed Matter, 1992
- Surface electronic structure of erbium silicide epitaxially grown on Si(111)Surface Science, 1992
- Schottky barriers at epitaxial silicide/Si interfacesApplied Surface Science, 1992
- Formation and electronic structure of terbium silicide epitaxially grown on Si(111)Solid State Communications, 1991
- Fabrication and structure of epitaxial terbium silicide on Si(111)Journal of Applied Physics, 1991
- Growth, characterization and electrical properties of epitaxial erbium silicideThin Solid Films, 1990
- Fabrication and structure of epitaxial Er silicide films on (111) SiApplied Physics Letters, 1989
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- Observation of a true interface state in strained-layer Cu adsorption on Ru(0001)Physical Review Letters, 1986