Polythiophene-based field-effect transistors with enhanced air stability
- 13 April 2004
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 142 (1-3) , 49-52
- https://doi.org/10.1016/j.synthmet.2003.07.004
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Thiophene-Phenylene and Thiophene-Thiazole Oligomeric Semiconductors with High Field-Effect Transistor On/Off RatiosChemistry of Materials, 2001
- High Field-Effect Mobility Oligofluorene Derivatives with High Environmental StabilityJournal of the American Chemical Society, 2001
- High-Resolution Inkjet Printing of All-Polymer Transistor CircuitsScience, 2000
- Mobility enhancement in conjugated polymer field-effect transistors through chain alignment in a liquid-crystalline phaseApplied Physics Letters, 2000
- Field-Effect Transistors Based on Thiophene Hexamer Analogues with Diminished Electron Donor StrengthChemistry of Materials, 1999
- Integrated Optoelectronic Devices Based on Conjugated PolymersScience, 1998
- Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobilityApplied Physics Letters, 1996
- All-Polymer Field-Effect Transistor Realized by Printing TechniquesScience, 1994
- Conformational chirality of oligothiophenes in the solid state. X‐Ray structure of 3,4′,4″‐trimethyl‐2,2′:5′,2″‐terthiopheneAdvanced Materials, 1994
- The X-ray structure and MNDO calculations of α-terthienyl: A model for polythiophenesSynthetic Metals, 1989