Dependence of EPR in diluted magnetic semiconductors on the host lattice
- 1 January 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (1) , 1-4
- https://doi.org/10.1103/physrevb.31.1
Abstract
We have studied the EPR in six wide-gap diluted magnetic semiconductors: Te, Se, S, Te, Se, and S, all containing about 10 at. % Mn, in order to determine the extent to which the EPR of the magnetic ions depends on their environment in these materials. The EPR linewidth and intensity as a function of temperature was obtained by measuring Faraday rotation and ellipticity associated with the resonance, a technique suitable for EPR studies when the resonance is very broad. It was found that, although the behavior of the EPR is qualitatively the same in all the above materials, its intensity and linewidth show a striking and systematic dependence on the nonmagnetic host lattice. Specifically, for a given group-VI element (anion) the resonance becomes broader and weaker as the atomic number of the group-II element (nonmagnetic cation) decreases; but, in contrast, for a given cation the resonance becomes broader and weaker as the atomic number of the anion increases. This provides interesting insights into the nature of the interaction between ions in diluted magnetic semiconductors.
Keywords
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