Theory of laser-materials damage by enhanced stimulated Raman scattering
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (5) , 2134-2136
- https://doi.org/10.1063/1.321853
Abstract
An analysis indicates that Raman‐active crystals fail at intensities If which are greater than the enhanced stimulated Raman‐scattering threshold intensity IR by an amount IT that is generally of the order of or less than IR. A typical value of IR at the ruby frequency is a few gigawatts per square centimeter, which is less than other intrinsic‐mechanism thresholds. At intensities I≳IR, the excess intensity I−IR is converted into Stokes radiation and phonons in a distance l≪d, where d is the thermal diffusion distance for a 10‐nsec pulse. The temperature rise from the rapidly thermalized phonons in the volume x<d is sufficient to cause material failure when I≳If.This publication has 6 references indexed in Scilit:
- Stimulated Raman scattering: Enhanced Stokes gain and effects of anti-Stokes and parametric phonon processesPhysical Review A, 1975
- Parametric instabilities of phonons: Nonlinear infrared absorptionPhysical Review B, 1974
- Stimulated Raman and Brillouin Scattering: Parametric-Instability Explanation of AnomaliesPhysical Review Letters, 1974
- Stress and temperature analysis for surface cooling or heating of laser window materialsJournal of Applied Physics, 1973
- Optical Distortion by Heated Windows in High-Power Laser SystemsJournal of Applied Physics, 1971
- The attenuation of high frequency phonons at low temperaturesPhysics Physique Fizika, 1964