Fabrication-related effects in metal-ZnO-SiO2-Si structures
- 1 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (9) , 560-562
- https://doi.org/10.1063/1.89806
Abstract
Experimental results are presented which show that the nonideal nature of electrical characteristics derived from metal‐ZnO‐SiO2‐Si structures, structures of the type proposed in surface‐acoustic‐wave applications, is due in large part to a deterioration of the Si‐SiO2 subsystem during the thin‐film ZnO deposition procedure. The thermally assisted breaking of surface‐state bonds and radiation damage are identified as the sources of the deterioration. Progress achieved to date in reducing the cited damage, including the use of radiation‐hardened SiO2 films and a low‐temperature O2 anneal, are also described and discussed.Keywords
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