Noise temperature in silicon in the hot electron region
- 1 December 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 18 (12) , 1186-1187
- https://doi.org/10.1109/T-ED.1971.17354
Abstract
The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found that the experimental results are in good agreement with the theory given by Moll. It is shown that for noise calculations in silicon field-effect transistors with pronounced carrier velocity saturation the noise temperature Tnversus field E may be approximated byT_{n}/T_{0}= 1 + γ(E/E_{c})^{2}with T0= lattice temperature, Ec= saturation field, γ = const.Keywords
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