Bulk and homoepitaxial GaN-growth and characterisation
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 153-158
- https://doi.org/10.1016/s0022-0248(98)00193-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Blue light-emitting diodes on GaN substrates, growth and characterizationJournal of Crystal Growth, 1998
- Chemical polishing of bulk and epitaxial GaNJournal of Crystal Growth, 1997
- Calculations of Point Defects in AlN and GaN; Lattice Relaxation EffectsActa Physica Polonica A, 1997
- The microstructure of gallium nitride monocrystals grown at high pressureJournal of Crystal Growth, 1996
- Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layersApplied Physics Letters, 1996
- Lattice parameters of gallium nitrideApplied Physics Letters, 1996
- Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substratesSolid State Communications, 1996
- Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxyMRS Internet Journal of Nitride Semiconductor Research, 1996
- Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaNApplied Physics Letters, 1995